| 发明名称 |
TRANSIENT VOLTAGE SUPPRESSOR AND METHODS |
| 摘要 |
Transient voltage suppressor and method for manufacturing the transient voltage suppressor having a dopant or carrier concentration in a portion of a gate region near a Zener region that is different from a dopant concentration in a portion of a gate region that is away from the Zener region. |
| 申请公布号 |
HK1138116(A1) |
申请公布日期 |
2015.06.19 |
| 申请号 |
HK20100103201 |
申请日期 |
2010.03.29 |
| 申请人 |
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC |
发明人 |
EMMANUEL SAUCEDO-FLORES E-;MINGJIAO LIU;FRANCINE Y. ROBB FY;ALI SALIH A |
| 分类号 |
H02H;H01L |
主分类号 |
H02H |
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