发明名称 COMPOSANT, PAR EXEMPLE TRANSISTOR NMOS, A REGION ACTIVE A CONTRAINTES EN COMPRESSION RELACHEES, ET PROCEDE DE FABRICATION
摘要 An integrated circuit includes a substrate and at least one NMOS transistor having, in the substrate, an active region surrounded by an insulating region. The insulating region is formed to includes at least one area in which the insulating region has two insulating extents that are mutually separated from each other by a separation region formed by a part of the substrate.
申请公布号 FR3007198(B1) 申请公布日期 2015.06.19
申请号 FR20130055476 申请日期 2013.06.13
申请人 STMICROELECTRONICS (ROUSSET) SAS 发明人 RIVERO CHRISTIAN;BOUTON GUILHEM;FORNARA PASCAL
分类号 H01L21/762;H01L21/336;H01L29/78 主分类号 H01L21/762
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