发明名称 |
COMPOSANT, PAR EXEMPLE TRANSISTOR NMOS, A REGION ACTIVE A CONTRAINTES EN COMPRESSION RELACHEES, ET PROCEDE DE FABRICATION |
摘要 |
An integrated circuit includes a substrate and at least one NMOS transistor having, in the substrate, an active region surrounded by an insulating region. The insulating region is formed to includes at least one area in which the insulating region has two insulating extents that are mutually separated from each other by a separation region formed by a part of the substrate. |
申请公布号 |
FR3007198(B1) |
申请公布日期 |
2015.06.19 |
申请号 |
FR20130055476 |
申请日期 |
2013.06.13 |
申请人 |
STMICROELECTRONICS (ROUSSET) SAS |
发明人 |
RIVERO CHRISTIAN;BOUTON GUILHEM;FORNARA PASCAL |
分类号 |
H01L21/762;H01L21/336;H01L29/78 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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