METHOD AND SYSTEM FOR PROVIDING AN ENGINEERED MAGNETIC LAYER INCLUDING HEUSLER LAYERS AND AN AMORPHOUS INSERTION LAYER

摘要

A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a pinned layer and nonmagnetic spacer layer between the free and pinned layers. At least one of the free and pinned layers includes at least one engineered Heusler structure having a first magnetic layer, a second magnetic layer and an amorphous layer between the first and second magnetic layers. At least one of the first and second magnetic layer(s) is a Heusler layer. The perpendicular magnetic anisotropy energy (PMAE) of the first magnetic layer exceeds out-of-plane demagnetization energy. The PMAE of the second magnetic layer exceeds out-of-plane demagnetization energy. The free layer and/or the pinned layer has a PMAE greater than an out-of-plane demagnetization energy. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.