METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

Provided are a semiconductor device and a method of manufacturing the same. The method of manufacturing the semiconductor device includes: a step of etching a substrate by using a first mask pattern formed on a substrate and forming a trench; a step of forming a preliminary device separation pattern which is filled in the trench and includes a first region and a second region with a first thickness; a step of forming a second mask pattern on the first region; a step of etching a part of the first mask pattern and the upper part of the second region exposed by the second mask pattern, and forming a second region with a second thickness which is less than the first thickness; a step of removing the first and the second mask patterns; and a step of etching the upper part of the first and the second regions and forming a device separation pattern which defines preliminary fin-type active patterns.