| 摘要 |
<p>According to an embodiment, a light emitting device comprises: a substrate; a first semiconductor layer arranged on the substrate; an active layer arranged on the first semiconductor layer; a second semiconductor layer arranged on the active layer; and a stress control layer located between the first semiconductor layer and the active layer, wherein the stress control layer comprises a plurality of first layers including InGaN and a plurality of second layers including GaN which are alternatively and repeatedly arranged in layers, and the substrate contains Si.</p> |
