| 发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE |
| 摘要 |
According to one embodiment, a method of manufacturing a semiconductor device includes forming a sealing resin layer containing an inorganic filler so as to seal a semiconductor chip, removing a portion of the surface of the sealing resin layer by dry etching such that a portion of the inorganic filler is exposed, and forming a shield layer so as to cover at least the sealing resin layer. |
| 申请公布号 |
US2015171021(A1) |
申请公布日期 |
2015.06.18 |
| 申请号 |
US201414475326 |
申请日期 |
2014.09.02 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
TAKANO Yuusuke;IMOTO Takashi;WATANABE Takeshi;HOMMA Soichi;SHIBUYA Katsunori |
| 分类号 |
H01L23/552;H01L21/56;H01L23/00;H01L23/31 |
主分类号 |
H01L23/552 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor device, the method comprising:
forming a sealing resin layer containing an inorganic filler so as to enclose a semiconductor chip therein; removing some portions of the sealing resin layer by dry etching such that a portion of the inorganic filler is exposed at the surface of the sealing resin layer; and forming a shield layer on the sealing resin layer, the shield layer contacting the exposed inorganic filler material at the surface of the sealing resin layer. |
| 地址 |
Tokyo JP |
