SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor device according to the present embodiment includes a first insulating film above a substrate. Contact plugs are located in contact holes passing through the first insulating film, respectively. The contact plugs have upper surfaces at positions lower than an upper surface of the first insulating film, respectively. Wires are located on the upper surface of the first insulating film. The wires are located at positions lower than the upper surface of the first insulating film to connect to upper surfaces of the contact plugs at positions of the contact holes, respectively.

主权项

1. A semiconductor device comprising:
a first insulating film above a substrate; contact plugs being in contact holes passing through the first insulating film and having upper surfaces at positions lower than an upper surface of the first insulating film, respectively, and wires on the upper surface of the first insulating film, the wires being at positions lower than the upper surface of the first insulating film to connect to upper surfaces of the contact plugs at positions of the contact holes, respectively.