FINGER METAL OXIDE METAL CAPACITOR FORMED IN A PLURALITY OF METAL LAYERS

摘要

A finger metal oxide metal capacitor including an outer conducting structure and an inner conducting structure. The outer conducting structure is defined in a plurality of metal layers and a plurality of via layers of an integrated circuit and includes first and second side portions. An inner conducting structure is defined in the plurality of metal layers and the plurality of via layers of the integrated circuit. Each of the outer conducting structure and the inner conducting structure includes respective finger sections extending in the plurality of metal layers. Oxide is arranged between the outer conducting structure and the inner conducting structure.

主权项

1. A finger metal oxide metal (MOM) capacitor, comprising:
an outer conducting structure defined in (i) a plurality of metal layers and a (ii) plurality of via layers of an integrated circuit, the outer conducting structure including
a first side portion including (i) a plurality of first finger sections extending in the plurality of metal layers and (ii) first hole vias connecting the first finger sections,a second side portion including (i) a plurality of second finger sections extending in the plurality of metal layers and (ii) second hole vias connecting the second finger sections, anda middle portion connecting the first side portion and the second side portion;an inner conducting structure defined in (i) the plurality of metal layers and (ii) the plurality of via layers of the integrated circuit and includinga first rectangular section defined in at least one of the plurality of metal layers,a plurality of “T”-shaped sections defined in others of the plurality of metal layers, andthird hole vias connecting the first rectangular section and the plurality of “T”-shaped sections, wherein the plurality of “T”-shaped sections and the first rectangular section extend (i) towards the middle portion and (ii) between the first side portion and the second side portion; and oxide arranged between the outer conducting structure and the inner conducting structure.