| 发明名称 |
METHODS OF PROTECTING A DIELECTRIC MASK LAYER AND RELATED SEMICONDUCTOR DEVICES |
| 摘要 |
Devices and methods for forming semiconductor devices with a protection layer for a dielectric mask layer are provided. One method includes, for instance; obtaining a substrate having at least one of a dielectric layer and a metal layer; forming a first SiCN dielectric mask layer on a top surface of at least one of the dielectric layer and a metal layer; and forming a silicon nitride (SiNx) cap layer on a top surface of the first SiCN dielectric mask layer. One intermediate semiconductor device includes, for instance: a substrate having at least one of a dielectric layer and a metal layer; a first SiCN dielectric mask layer on a top surface of at least one of the dielectric layer and a metal layer; and a silicon nitride (SiNx) cap layer on a top surface of the first SiCN dielectric mask layer. |
| 申请公布号 |
US2015171001(A1) |
申请公布日期 |
2015.06.18 |
| 申请号 |
US201314106340 |
申请日期 |
2013.12.13 |
| 申请人 |
GLOBALFOUNDRIES Inc. |
发明人 |
SUN Zhiguo;SMITH Daniel;GOPALAKRISHNAN Kumarapuram;LIU Hung-Wei |
| 分类号 |
H01L23/498;H01L21/3205;H01L21/02;H01L21/768;H01L21/033 |
主分类号 |
H01L23/498 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a semiconductor device, said method comprising:
obtaining a substrate having at least one of a dielectric layer and a metal layer; forming a first SiCN dielectric mask layer on a top surface of at least one of the dielectric layer and a metal layer; and forming a silicon nitride (SiNx) cap layer on a top surface of the first SiCN dielectric mask layer. |
| 地址 |
Grand Cayman KY |
