发明名称 |
METHOD FOR FORMING SELF-ALIGNED CONTACTS/VIAS WITH HIGH CORNER SELECTIVITY |
摘要 |
A method of etching self-aligned contact/via features in a low-k dielectric layer disposed below a hardmask, which is disposed below a planarization layer. At least one cycle is provided, where each cycle comprises thinning the planarization layer, forming a deposition layer on the hardmask and planarization layer; and etching the low-k dielectric layer masked by the deposition layer. |
申请公布号 |
US2015170965(A1) |
申请公布日期 |
2015.06.18 |
申请号 |
US201314105073 |
申请日期 |
2013.12.12 |
申请人 |
Lam Research Corporation |
发明人 |
INDRAKANTI Ananth;WANG Peng;HUDSON Eric A. |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
1. A method of etching self-aligned contact/via features in a dielectric layer disposed below a hardmask, which is disposed below a planarization layer, comprising at least one cycle, wherein each cycle comprises:
thinning the planarization layer; forming a deposition layer on the hardmask and planarization layer; and etching the dielectric layer masked by the deposition layer. |
地址 |
Fremont CA US |