发明名称 NEAR-FIELD EXPOSURE MASK AND PATTERN FORMING METHOD
摘要 A near-field exposure mask according to an embodiment includes: a substrate; a concave-convex structure having convexities and concavities and formed on one surface of the substrate; a near-field light generating film arranged at least on a tip portion of each of the convexities, the near-field light generating film being a layer containing at least one element selected from the group consisting of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a film stack formed with layers made of some of those materials; and a resin filled in each of the concavities.
申请公布号 US2015168825(A1) 申请公布日期 2015.06.18
申请号 US201414571385 申请日期 2014.12.16
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 Shida Naomi;Todori Kenji;Mori Shigehiko;Yoshimura Reiko;Kashiwagi Hiroyuki;Yoneda Ikuo;Tada Tsukasa
分类号 G03F1/76;G03F1/80 主分类号 G03F1/76
代理机构 代理人
主权项
地址 Tokyo JP