METHODS OF FORMING REPLACEMENT GATE STRUCTURES FOR SEMICONDUCTOR DEVICES AND THE RESULTING SEMICONDUCTOR PRODUCTS

摘要

One method disclosed includes, forming a sacrificial gate structure trench in a stack of sacrificial material layers, forming a sacrificial gate structure within the trench, performing at least one process operation to remove at least portions of the stack of sacrificial material layers and thereby expose sidewalls of the sacrificial gate structure, forming a sidewall spacer adjacent the exposed sidewalls of the sacrificial gate structure, removing the sacrificial gate structure so as to define a replacement gate cavity between the spacers, forming a replacement gate structure in the replacement gate cavity, and forming a gate cap above the replacement gate structure within the replacement gate cavity.

主权项

1. A method of forming a replacement gate structure for a device, comprising:
forming a stack of sacrificial material layers above a semiconductor substrate; forming at least a sacrificial gate structure trench in said stack of sacrificial material layers; forming a sacrificial gate structure within said trench; performing at least one process operation to remove at least portions of said stack of sacrificial material layers and thereby expose sidewalls of said sacrificial gate structure; forming a sidewall spacer adjacent at least said exposed sidewalls of said sacrificial gate structure; removing at least said sacrificial gate structure so as to define a replacement gate cavity between said sidewall spacers; forming a replacement gate structure in said replacement gate cavity; and forming a gate cap above said replacement gate structure within said replacement gate cavity.