| 发明名称 |
TRANSISTOR, RESISTANCE VARIABLE MEMORY DEVICE INCLUDING THE SAME, AND MANUFACTURING METHOD THEREOF |
| 摘要 |
A resistance variable memory device including a vertical transistor includes an active pillar including a channel region, a source formed in one end of the channel region, and a lightly doped drain (LDD) region and a drain formed in the other end of the channel region, a first gate electrode formed to surround a periphery of the LDD region and having a first work function, and a second gate electrode formed to be connected to the first gate electrode and to surround the channel region and having a second work function that is higher than the first work function. |
| 申请公布号 |
US2015171143(A1) |
申请公布日期 |
2015.06.18 |
| 申请号 |
US201514634121 |
申请日期 |
2015.02.27 |
| 申请人 |
SK hynix Inc. |
发明人 |
PARK Nam Kyun |
| 分类号 |
H01L27/24;H01L43/08;H01L43/12;H01L29/49;H01L29/78;H01L29/66;H01L27/22;H01L29/45;H01L43/02;H01L45/00 |
主分类号 |
H01L27/24 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
an active pillar including a channel region, a source formed in one end of the channel region, and a lightly doped drain (LDD) region and a drain formed in the other end of the channel region; a first gate electrode formed to surround a periphery of the LDD region and having a first work function; and a second gate electrode formed to be connected to the first gate electrode and to surround the channel region, and having a second work function that is higher than the first work function, wherein the second gate electrode is formed to have a thickness larger than a thickness of the first gate electrode. |
| 地址 |
Gyeonggi-do KR |
