发明名称 PUMPED POWER REGULATION SYSTEM BASED ON INSULATED GRATE BIPOLAR TRANSISTOR (IGBT CONTROL) AND METHOD THEREOF
摘要 A pumped power regulation system based on Insulated Grate Bipolar Transistor (IGBT) control and a method thereof. The system is connected to a power station monitoring system (2) and a pumped storage generator unit (3), and includes an IGBT controller (20) and a power regulating circuit group (10). The power regulating circuit group includes multiple sets of power regulating circuits (11). In the method, the IGBT controller receives a pumped storage instruction outputted from the power station monitoring system (S401); the pumped storage instruction is parsed and a required pumping power is obtained (S402); N sets of the power regulating circuits in the power regulating circuit group are started according to the pumping power, N-1 sets of the power regulating circuits are performed in the full-power output state, and the left one set is performed in a power regulation output state, so that the output power of the N sets of the power regulating circuits is arrived at the pumping power (S403); and the pumped storage generator set is operated in a pumping operation state according to the pumping power (S404).
申请公布号 WO2015085587(A1) 申请公布日期 2015.06.18
申请号 WO2013CN89409 申请日期 2013.12.13
申请人 STATE GRID CORPORATION OF CHINA;STATE GRID XINYUAN COMPANY LTD.;STATE GRID XINYUAN POWER MAINTENANCE BRANCH 发明人 LI, HONGWEI;DONG, YANGWEI;JIANG, HAISHAN;SHEN, HUACHUN;LIU, ZHE
分类号 H02J3/46 主分类号 H02J3/46
代理机构 代理人
主权项
地址