发明名称 |
HIGH POWER SEMIPOLAR {30-3-1} LIGHT-EMITTING DIODES WITH LOW CURRENT DROOP AND LOW THERMAL DROOP |
摘要 |
<p>A high power semipolar {30-3-1 } light-emitting diode (LED) with low current droop and low thermal droop. Specifically, a thick active layer is used in order to reduce efficiency droop. For example, the LED's efficiency is higher than 40% with an active layer thickness larger than 10 nm. Experimental data shows the LED's efficiency droop is less than 1% at 35 A/cm2, 5% at 50 A/cm2, 10% at 100 A/cm2, and/or 20% at 1000 A/cm2. Consequently, the LED's efficiency droop is lower than that of a polar (c-plane) LED operating at a similar current density with a similar indium composition. Moreover, the LED has a small device area less than about 0.1 mm2 in which the LED's light output power is over about 1 W.</p> |
申请公布号 |
WO2015089379(A1) |
申请公布日期 |
2015.06.18 |
申请号 |
WO2014US69975 |
申请日期 |
2014.12.12 |
申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
ZHAO, YUJI;OH, SANG HO;BECERRA, DANIEL L.;DENBAARS, STEVEN P.;NAKAMURA, SHUJI |
分类号 |
H01L29/06 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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