DOPING CARBON NANOTUBES AND GRAPHENE FOR IMPROVING ELECTRONIC MOBILITY

摘要

A method and an apparatus for doping a graphene or nanotube thin-film fieldeffect transistor device to improve electronic mobility. The method includes selectively applying a dopant to a channel region of a graphene or nanotube thin-film field-effect transistor device to improve electronic mobility of the field-effect transistor device. An apparatus that includes a graphene or nanotube thin-film field-effect transistor device fabricated on a substrate with an exposed channel region, wherein the channel region is doped with a dopant to improve electronic mobility, and contact metal disposed over the doped channel region of the graphene or nanotube thin-film field-effect transistor device.