| 摘要 |
PROBLEM TO BE SOLVED: To provide a photomask blank in which a fine photomask pattern can be formed with high accuracy even when a thin photoresist is used.SOLUTION: The photomask blank is a raw material of a photomask to be used for photolithography for forming a resist pattern having line width of 0.1 μm or less by use of exposure light at a wavelength of 250 nm or less, and the photomask blank comprises a transparent substrate and a Cr-containing film. The Cr-containing film comprises one or more layers; and at least one of the layers is a CrC compound layer containing Cr, O and/or N, and C, in which Cr is included by 50 atomic% or less, O and N in are included in total by 25 atomic% or more, and C is included by 5 atomic% or more. With the above photomask blank, a high dry etching rate is obtained; a photoresist used as an etching mask upon patterning the Cr-containing film is subjected to reduced load during dry etching, which allows reduction in the thickness of the photoresist; and a fine photomask pattern can be formed with high accuracy. |
