| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device capable of reducing fluctuation in threshold voltage, and to provide a method of manufacturing the same.SOLUTION: A silicon carbide semiconductor device comprises a silicon carbide substrate 10, a gate insulating film 15, and a gate electrode 27. The silicon carbide substrate 10 has a first principal surface 10a, and a second principal surface 10b provided at an opposite side to the first principal surface 10a. The gate insulating film 15 is provided so as to be in contact with the first principal surface 10a of the silicon carbide substrate 10. The gate electrode 27 is provided on the gate insulating film 15 so as to sandwich the gate insulating film 15 with the silicon carbide substrate 10. In a case where a first stress test of applying a gate voltage of -5 V to the gate electrode 27 for 100 hours is performed under a temperature of 175°C, and when a threshold voltage before the first stress test is performed is used as a first threshold voltage, and a threshold voltage after the first stress test is performed is used as a second threshold voltage, an absolute value of a difference between the first threshold voltage and the second threshold voltage is 0.5 V or less. |
