发明名称 |
PEELING METHOD AND PEELING APPARATUS |
摘要 |
<p>An object is to provide a novel peeling method and a novel peeling apparatus. A peeling method including a first step of forming a separation layer over a substrate, a second step of forming a layer to be separated over the separation layer, a third step of forming a peeling starting point by separating part of the layer to be separated from the separation layer, and a fourth step of peeling the layer to be separated from the substrate using the peeling starting point. In the fourth step, the substrate temperature is higher than or equal to 60 degrees Celsius and lower than or equal to 90 degrees Celsius.</p> |
申请公布号 |
WO2015087192(A1) |
申请公布日期 |
2015.06.18 |
申请号 |
WO2014IB66464 |
申请日期 |
2014.12.01 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI, SHUNPEI;SUZUKI, KUNIHIKO |
分类号 |
H01L21/02;H01L21/336;H01L29/786;H01L51/50;H05B33/10 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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