| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a configuration that can suppress increase in oxygen deficiency in an oxide semiconductor layer, and to provide a method of producing the same.SOLUTION: A semiconductor device is configured to have: an oxide insulating layer; an interlayer formed separately on the oxide insulating layer; a source electrode layer and a drain electrode layer formed on the interlayer; an oxide semiconductor layer having electrical connection with each of the source electrode layer and the drain electrode layer, and contacted with the oxide insulating layer; a gate insulating film formed on the source electrode layer, the drain electrode layer, and the oxide semiconductor layer; and a gate electrode layer formed on the gate insulating film so as to be overlapped with the source electrode layer, the drain electrode layer, and the oxide semiconductor layer. |
