USE OF DIELECTRIC FILM TO REDUCE RESISTIVITY OF TRANSPARENT CONDUCTIVE OXIDE IN NANOWIRE LEDS

摘要

Various embodiments include methods of fabricating light emitting diode (LED) devices, such as nanowire LED devices, that include forming a layer of a transparent, electrically conductive material over at least a portion of a non-planar surface of an LED device, and depositing a layer of a dielectric material over at least a portion of the layer of transparent conductive material, wherein depositing the layer of dielectric material comprises at least one of: (a) depositing the layer using a chemical vapor deposition (CVD) process, (b) depositing the layer at a temperature of 200° C. or more, and (c) depositing the layer using one or more chemically active precursors for the dielectric material.

主权项

1. A method of fabricating a light emitting diode (LED) device, comprising:
forming a layer of a transparent, electrically conductive material over at least a portion of a non-planar surface of the LED device; and depositing a layer of a dielectric material over at least a portion of the layer of transparent conductive material, wherein depositing the layer of dielectric material comprises at least one of: (a) depositing the layer using a chemical vapor deposition (CVD) process; (b) depositing the layer at a temperature of 200° C. or more; and (c) depositing the layer using one or more chemically active precursors for the dielectric material.