发明名称 Pixel With Raised Photodiode Structure
摘要 An active pixel cell includes an isolation feature and a photodiode, in which the active pixel cell is on a semiconductor substrate with a top surface. The isolation feature is in the top surface of the semiconductor substrate. The photodiode is adjacent to the isolation feature. The photodiode includes a first-type pinned photodiode (PPD) and a second-type PPD. The first-type PPD is in the pixel region, in which the first-type PPD has a first-type PPD surface coplanar with the top surface. The second-type PPD is on the first-type PPD surface, in which the second-type PPD has a second-type PPD surface which is elevated higher than the first-type PPD surface.
申请公布号 US2015171243(A1) 申请公布日期 2015.06.18
申请号 US201314132702 申请日期 2013.12.18
申请人 Taiwan Semiconductor Manufacturing CO., LTD. 发明人 Lee Yueh-Chuan
分类号 H01L31/0352;H01L31/18;H01L21/76;H01L27/146 主分类号 H01L31/0352
代理机构 代理人
主权项 1. An active pixel cell on a semiconductor substrate with a top surface, the active pixel cell comprising: an isolation feature in the top surface of the semiconductor substrate; and a photodiode adjacent to the isolation feature, wherein the photodiode comprises: a first-type pinned photodiode (PPD) in the semiconductor substrate, wherein the first-type PPD has a first-type PPD surface coplanar with the top surface; anda second-type PPD on the first-type PPD surface, wherein the second-type PPD has a second-type PPD surface which is elevated higher than the first-type PPD surface.
地址 Hsinchu TW