| 发明名称 |
THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, ARRAY SUBSTRATE AND DISPLAY DEVICE |
| 摘要 |
Embodiments of the invention provide a thin film transistor, a method of manufacturing the same, an array substrate comprising the thin film transistor and a display device. The method of manufacturing the thin film transistor comprises steps of forming a gate electrode (220), a gate insulating layer (230), an oxide active layer (240), a source electrode (260) and a drain electrode (270) on a substrate (210). After forming the oxide active layer (240), the method further comprises a step of forming an etch barrier layer (250) of a metal oxide on the oxide active layer (240). |
| 申请公布号 |
US2015171219(A1) |
申请公布日期 |
2015.06.18 |
| 申请号 |
US201314347124 |
申请日期 |
2013.12.13 |
| 申请人 |
BOE TECHNOLOGY GROUP CO., LTD. |
发明人 |
Jiang Chunsheng;Fang Jingfei |
| 分类号 |
H01L29/786;H01L27/12;H01L21/02;H01L29/66 |
主分类号 |
H01L29/786 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a thin film transistor, comprising steps of forming a gate electrode, a gate insulating layer, an oxide active layer, a source electrode and a drain electrode on a substrate,
wherein after forming the oxide active layer, the method further comprises a step of forming an etch barrier layer of a metal oxide on the oxide active layer. |
| 地址 |
Beijing CN |
