| 发明名称 |
FIELD EFFECT SEMICONDUCTOR DEVICE |
| 摘要 |
In order to reduce the source resistance in a field effect semiconductor device, an electron injection layer, which causes a band-to-band tunnel current to flow between a source electrode and a channel forming layer of which the central portion is a channel layer, is provided on the channel forming layer on the side in contact with the channel layer. |
| 申请公布号 |
US2015171202(A1) |
申请公布日期 |
2015.06.18 |
| 申请号 |
US201414547440 |
申请日期 |
2014.11.19 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
Takahashi Tsuyoshi |
| 分类号 |
H01L29/778;H01L29/51;H01L29/205 |
主分类号 |
H01L29/778 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A field effect semiconductor device, comprising:
a channel forming layer; a channel layer provided in a central portion of the channel forming layer; a gate electrode provided in contact with the channel layer; an electron injection layer, which is provided on the channel forming layer on the side in contact with the channel layer and which causes a band-to-band tunnel current to flow between a source electrode and the channel forming layer; and a drain electrode provided on top of the channel forming layer and positioned on the opposite side of the channel layer from the source electrode. |
| 地址 |
Kawasaki-shi JP |
