| 发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
| 摘要 |
A semiconductor device according to the present embodiment includes a semiconductor substrate. A first insulating film is provided on the semiconductor substrate. A charge trap layer is provided on the first insulating film and the charge trap layer includes a silicide layer made of a metal silicide. A second insulating film is provided on the charge trap layer. A control gate electrode is provided on the second insulating film. |
| 申请公布号 |
US2015171184(A1) |
申请公布日期 |
2015.06.18 |
| 申请号 |
US201414197912 |
申请日期 |
2014.03.05 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
NAKAJIMA KAZUAKI |
| 分类号 |
H01L29/51;H01L21/28;H01L29/792 |
主分类号 |
H01L29/51 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a semiconductor substrate; a first insulating film on the semiconductor substrate; a charge trap layer on the first insulating film, the charge trap layer including a silicide layer made of a metal silicide; a second insulating film on the charge trap layer; and a control gate electrode on the second insulating film. |
| 地址 |
MINATO-KU JP |
