BILAYER GRAPHENE TUNNELING FIELD EFFECT TRANSISTOR

摘要

A bilayer graphene tunnelling field effect transistor is provided comprising a bilayer graphene layer, and at least a top gate electrode and a bottom gate electrode, wherein the at least a top gate electrode and a bottom electrode are appropriately positioned relative to one another so that the following regions are electrically induced in the chemically undoped bilayer graphene layer upon appropriate biasing of the gate electrodes: a source region, a channel region, and a drain region.

主权项

1. A bilayer graphene tunnelling field effect transistor, comprising:
a bilayer graphene having a bottom surface and a top surface; a bottom gate electrode capacitively coupled to the bottom surface of the bilayer graphene; and a first top gate electrode capacitively coupled to the top surface of the graphene bilayer,wherein the bottom gate electrode at least partially overlaps the first top gate electrode, thereby defining a channel region capacitively coupled to the bottom gate electrode and the first top gate electrode, a source region only capacitively coupled to the top gate electrode, and a drain region only capacitively coupled to the bottom gate electrode.