SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

Provided is a semiconductor device and a method for fabricating the same. The semiconductor device includes an interlayer insulating layer formed on a semiconductor substrate, a metal contact plug penetrating the interlayer insulating layer, a cylindrical lower electrode formed on the metal contact plug and including a first metal and a trench, a supporter formed in the trench and including a second metal that is different from the first metal, a dielectric layer formed on the lower electrode and the supporter and an upper electrode formed on the dielectric layer.

主权项

1. A semiconductor device comprising:
an interlayer insulating layer on a semiconductor substrate; a metal contact plug in at least a portion of the interlayer insulating layer; a cylindrical lower electrode on the metal contact plug and including a first metal and a trench; a supporter in the trench and including a second metal that is different from the first metal; a dielectric layer on the lower electrode and the supporter; and an upper electrode on the dielectric layer.