发明名称 SOLID STATE IMAGE PICKUP DEVICE AND METHOD OF PRODUCING SOLID STATE IMAGE PICKUP DEVICE
摘要 Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back-side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back-side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.
申请公布号 US2015171131(A1) 申请公布日期 2015.06.18
申请号 US201514610010 申请日期 2015.01.30
申请人 Sony Corporation 发明人 Abe Takashi;Nakamura Nobuo;Mabuchi Keiji;Umeda Tomoyuki;Fujita Hiroaki;Funatsu Eiichi;Sato Hiroki
分类号 H01L27/146;H01L23/544 主分类号 H01L27/146
代理机构 代理人
主权项 1. A solid state image pickup device comprising: a photo-electric conversion device configured to convert a spectrum of incident light into a signal charge, said photo-electric conversion region being in a pixel region of a semiconductor substrate; a light-shielding film configured to inhibit transmission of said incident light onto said semiconductor substrate, an opening through the light-shielding film being between a micro-lens and said photo-electric conversion device; wirings in an insulating layer, said semiconductor substrate being between said light-shielding film and said insulating layer; a metallic alignment mark within said semiconductor substrate at a first surface of the semiconductor substrate, said first surface being between said insulating layer and a light receiving surface of the semiconductor substrate.
地址 Tokyo JP