发明名称 |
SOLID STATE IMAGE PICKUP DEVICE AND METHOD OF PRODUCING SOLID STATE IMAGE PICKUP DEVICE |
摘要 |
Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back-side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back-side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed. |
申请公布号 |
US2015171131(A1) |
申请公布日期 |
2015.06.18 |
申请号 |
US201514610010 |
申请日期 |
2015.01.30 |
申请人 |
Sony Corporation |
发明人 |
Abe Takashi;Nakamura Nobuo;Mabuchi Keiji;Umeda Tomoyuki;Fujita Hiroaki;Funatsu Eiichi;Sato Hiroki |
分类号 |
H01L27/146;H01L23/544 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
1. A solid state image pickup device comprising:
a photo-electric conversion device configured to convert a spectrum of incident light into a signal charge, said photo-electric conversion region being in a pixel region of a semiconductor substrate; a light-shielding film configured to inhibit transmission of said incident light onto said semiconductor substrate, an opening through the light-shielding film being between a micro-lens and said photo-electric conversion device; wirings in an insulating layer, said semiconductor substrate being between said light-shielding film and said insulating layer; a metallic alignment mark within said semiconductor substrate at a first surface of the semiconductor substrate, said first surface being between said insulating layer and a light receiving surface of the semiconductor substrate. |
地址 |
Tokyo JP |