发明名称 |
PROCESS FOR FORMING EDGE WORDLINE IMPLANTS ADJACENT EDGE WORDLINES |
摘要 |
A process for forming tilted edge wordline implants is disclosed. The process includes forming a first drain implant in a substrate, forming a first tilted implant in a substrate adjacent a first edge wordline to supplement said first drain implant where the first tilted implant is provided at a tilt angle from a first direction and forming a second tilted implant in the substrate adjacent a second edge wordline to supplement another first drain implant where the second tilted implant is provided at a tilt angle from a second direction. A second drain implant is formed in the substrate. |
申请公布号 |
US2015171100(A1) |
申请公布日期 |
2015.06.18 |
申请号 |
US201314108780 |
申请日期 |
2013.12.17 |
申请人 |
Spansion LLC |
发明人 |
THURGATE Timothy;SUN Yu;CHEN Chun |
分类号 |
H01L27/115;H01L21/265 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
1. A method for forming tilted edge wordline implants, said method comprising:
forming a first drain implant in a substrate; forming a first tilted implant in a substrate adjacent a first edge wordline to supplement said first drain implant wherein said first tilted implant is provided at a tilt angle from a first direction; forming a second tilted implant in said substrate adjacent a second edge wordline to supplement the first drain implant wherein said second tilted implant is provided at a tilt angle from a second direction; and forming a second drain implant in said substrate. |
地址 |
Sunnyvale CA US |