发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 Diffusion regions having the same conductivity type are arranged on a side of a second wiring and a side of a third wiring, respectively under a first wiring connected to a signal terminal. Diffusion regions are separated in a whole part or one part of a range in a Y direction. That is, under first wiring, diffusion regions are only formed in parts opposed to diffusion regions formed under the second wiring and third wiring connected to a power supply terminal or a ground terminal, and a diffusion region is not formed in a central part in an X direction. Therefore, terminal capacity of the signal terminal can be reduced without causing ESD resistance to be reduced, in an ESD protection circuit with the signal terminal.
申请公布号 US2015171068(A1) 申请公布日期 2015.06.18
申请号 US201514628175 申请日期 2015.02.20
申请人 PANASONIC CORPORATION 发明人 USAMI Shiro
分类号 H01L27/02;H01L29/861 主分类号 H01L27/02
代理机构 代理人
主权项
地址 Osaka JP