发明名称 Methods of Fabricating Micro- and Nanostructure Arrays and Structures Formed Therefrom
摘要 Methods of fabricating micro- and nanostructures comprise top-down etching of lithographically patterned GaN layer to form an array of micro- or nanopillar structures, followed by selective growth of GaN shells over the pillar structures via selective epitaxy. Also provided are methods of forming micro- and nanodisk structures and microstructures formed from thereby.
申请公布号 US2015170901(A1) 申请公布日期 2015.06.18
申请号 US201414568576 申请日期 2014.12.12
申请人 University of Maryland, College Park ;Northrop Grumman Systems Corporation ;United States of America, as Represented by the Secretary of Commerce 发明人 Motayed Abhishek;Krylyuk Sergiy;Davydov Albert V.;King Matthew;Ha Jong-Yoon
分类号 H01L21/02;H01L21/3065;H01L21/306 主分类号 H01L21/02
代理机构 代理人
主权项 1. A method of fabricating an array of microstructures, comprising the steps of: providing an epilayer of gallium nitride (GaN) grown on a substrate; etching an array of GaN pillars in said substrate; and growing GaN shells on said etched array of GaN pillars to form core-shell structures via selective epitaxy.
地址 College Park MD US