发明名称 |
Methods of Fabricating Micro- and Nanostructure Arrays and Structures Formed Therefrom |
摘要 |
Methods of fabricating micro- and nanostructures comprise top-down etching of lithographically patterned GaN layer to form an array of micro- or nanopillar structures, followed by selective growth of GaN shells over the pillar structures via selective epitaxy. Also provided are methods of forming micro- and nanodisk structures and microstructures formed from thereby. |
申请公布号 |
US2015170901(A1) |
申请公布日期 |
2015.06.18 |
申请号 |
US201414568576 |
申请日期 |
2014.12.12 |
申请人 |
University of Maryland, College Park ;Northrop Grumman Systems Corporation ;United States of America, as Represented by the Secretary of Commerce |
发明人 |
Motayed Abhishek;Krylyuk Sergiy;Davydov Albert V.;King Matthew;Ha Jong-Yoon |
分类号 |
H01L21/02;H01L21/3065;H01L21/306 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
1. A method of fabricating an array of microstructures, comprising the steps of:
providing an epilayer of gallium nitride (GaN) grown on a substrate; etching an array of GaN pillars in said substrate; and growing GaN shells on said etched array of GaN pillars to form core-shell structures via selective epitaxy. |
地址 |
College Park MD US |