| 发明名称 |
METHOD FOR IMPLANTED-ION ASSISTED GROWTH OF METAL OXIDE NANOWIRES AND PATTERNED DEVICE FABRICATED USING THE METHOD |
| 摘要 |
An embodiment of the present disclosure provides a method of growing metal oxide nanowires by ion implantation, the method including the steps of: depositing a metal oxide thin film on a substrate; implanting ions into the metal oxide thin film; and heating the ion-implanted metal oxide thin film to grow metal oxide nanowires. |
| 申请公布号 |
US2015167154(A1) |
申请公布日期 |
2015.06.18 |
| 申请号 |
US201414571519 |
申请日期 |
2014.12.16 |
| 申请人 |
INDUSTRY-ACADEMIC COOPERATION FOUNDATION YONSEI UNIVERSITY |
发明人 |
KIM Jongbaeg;NA Hyungjoo;BAEK Dae-Hyun;LEE Kyoung Hoon;CHOI Jungwook;SIM Jaesam |
| 分类号 |
C23C14/48;C23C14/04;C23C28/04;G03F7/20 |
主分类号 |
C23C14/48 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of growing metal oxide nanowires by ion implantation, the method comprising the steps of:
depositing a metal oxide thin film on a substrate; implanting ions into the metal oxide thin film; and heating the ion-implanted metal oxide thin film to grow metal oxide nanowires. |
| 地址 |
Seoul KR |
