| 摘要 |
A semiconductor device (101) is provided with a plurality of pixel regions (Pix) that are disposed in matrix having the row direction and the column direction. Each of the pixel regions (Pix) has: a thin film transistor (10) having a gate electrode (2), a gate insulating layer (5) covering the gate electrode, an oxide semiconductor layer (7A) formed on the gate insulating layer, a source electrode (9s) and a drain electrode (9d), which are electrically connected to the oxide semiconductor layer; a metal oxide layer (7B) formed of the oxide film that is the same material with which the oxide semiconductor layer is formed; an interlayer insulating layer (13) covering the thin film transistor and the metal oxide layer; and a pixel electrode (15), which is provided on the interlayer insulating layer, and which is electrically connected to the drain electrode. The metal oxide layer (7B) includes a conductor region (70c), and the pixel electrode (15) overlaps at least a part of the conductor region (70c) with the interlayer insulating layer (13) therebetween. |
