| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology capable of improving electric characteristics of a nitride semiconductor device. ! SOLUTION: A nitride semiconductor laminate is configured to comprise: a substrate 2; a back barrier layer 5 formed of a nitride semiconductor represented by a composition formula of AlxGa(1-x)N, and provided on any one of principal surfaces of the substrate; a channel layer 6 formed of a gallium nitride, and provided on the back barrier layer so as to be identical to a lattice constant of the back barrier layer; and a barrier layer 7 formed of a nitride semiconductor represented by a composition formula of InyAl(1-y)N, and provided on the channel layer so that a lattice mismatch rate with the channel layer 6 becomes 0.5% or less. ! COPYRIGHT: (C)2015,JPO&INPIT |
