| 摘要 |
PROBLEM TO BE SOLVED: To provide a solar cell having a selective emitter formed by ion implantation and in-situ (field) surface passivation.SOLUTION: A method of manufacturing a selective emitter solar cell includes a step for providing a substrate including a p-type base layer 10, and a step for doping a second region 15 with higher concentration than a first region 20, by introducing n-type dopant to the first region 20 and second region 15 on the front surface of the substrate by ion implantation. The substrate can be passed through a single high temperature anneal cycle for activating the dopant, moving the dopant into the substrate, forming a p-n junction 25, and forming a selective emitter. During the single anneal cycle, oxygen can be introduced for forming the passivation oxide layer on the front and rear in-situ (field). Calcination of the front contact and rear contact, and metal coating by contact connection can be performed in a single simultaneous calcination process. |
