| 发明名称 |
Epitaxially Growing III-V Contact Plugs for MOSFETs |
| 摘要 |
A Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) includes a source/drain region comprising a first III-V compound semiconductor material, and a contact plug over and connected to the source/drain region. The contact plug includes a second III-V compound semiconductor material. |
| 申请公布号 |
US2015171206(A1) |
申请公布日期 |
2015.06.18 |
| 申请号 |
US201314132450 |
申请日期 |
2013.12.18 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
van Dal Mark |
| 分类号 |
H01L29/78;H01L29/417;H01L29/423;H01L29/66 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An integrated circuit device comprising:
a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) comprising:
a source/drain region comprising a first III-V compound semiconductor material; anda contact plug over and connected to the source/drain region, wherein the contact plug comprises a second III-V compound semiconductor material. |
| 地址 |
Hsin-Chu TW |
