发明名称 |
GaN BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR PRODUCING SAME |
摘要 |
A GaN based semiconductor light-emitting device is provided. The light-emitting device includes a first GaN based compound semiconductor layer of an n-conductivity type; an active layer; a second GaN based compound semiconductor layer; an underlying layer composed of a GaN based compound semiconductor, the underlying layer being disposed between the first GaN based compound semiconductor layer and the active layer; and a superlattice layer composed of a GaN based compound semiconductor doped with a p-type dopant, the superlattice layer being disposed between the active layer and the second GaN based compound semiconductor layer. |
申请公布号 |
US2015171275(A1) |
申请公布日期 |
2015.06.18 |
申请号 |
US201514628498 |
申请日期 |
2015.02.23 |
申请人 |
Sony Corporation |
发明人 |
Biwa Goshi;Okuyama Hiroyuki |
分类号 |
H01L33/32;H01L33/06;H01L33/00 |
主分类号 |
H01L33/32 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device comprising:
a first semiconductor layer having a Ga component; an active layer; a second semiconductor layer having a Ga component; and wherein the active layer is located between the first and the second semiconductor layers. |
地址 |
Tokyo JP |