发明名称 THIN FILM TRANSISTOR AND DISPLAY DEVICE USING THE SAME
摘要 A thin film transistor and a display device having the thin film transistor capable of reducing the voltage between the source and drain electrodes of the thin film transistor are disclosed. One inventive aspect includes a gate electrode, a semiconductor pattern, a source electrode and a drain electrode. The source and drain electrodes are formed on the semiconductor pattern and spaced apart from each other. At least one of the source electrode and the drain electrode does not overlap the gate electrode.
申请公布号 US2015171114(A1) 申请公布日期 2015.06.18
申请号 US201414279204 申请日期 2014.05.15
申请人 Samsung Display Co., Ltd. 发明人 CHO Seung-Hwan;Kang Su-Hyoung;Khang Yoon Ho;Shin Young Ki;Cha Myoung Geun
分类号 H01L27/12;H01L29/786 主分类号 H01L27/12
代理机构 代理人
主权项 1. A display device, comprising: a gate driver; and at least one thin film transistor including: a gate electrode;a semiconductor pattern formed on the gate electrode and formed of an oxide semiconductor material; anda source electrode and a drain electrode formed on the semiconductor pattern, wherein the source and drain electrodes are spaced apart from each other, wherein at least one of the source electrode or the drain electrode does not overlap the gate electrode.
地址 Yongin-City KR