METHOD OF CREATING A MASKLESS AIR GAP IN BACK END INTERCONNECTIONS WITH DOUBLE SELF-ALIGNED VIAS

摘要

A method including patterning a thickness dimension of an interconnect material into a thickness dimension for a wiring line with one or more vias extending from the wiring line and introducing a dielectric material on the interconnect material. A method including depositing and patterning an interconnect material into a wiring line and one or more vias; and introducing a dielectric material on the interconnect material such that the one or more vias are exposed through the dielectric material. An apparatus including a first interconnect layer in a first plane and a second interconnect in a second plane on a substrate; and a dielectric layer separating the first and second interconnect layers, wherein the first interconnect layer comprises a monolith including a wiring line and at least one via, the at least one via extending from the wiring line to a wiring line of the second interconnect layer.

主权项

1. A method comprising:
patterning an interconnect material on a integrated circuit substrate; patterning a thickness dimension of the interconnect material into a thickness dimension for a wiring line with one or more vias extending from the wiring line; and introducing a dielectric material on the interconnect material such that an end of the one or more vias are exposed through the dielectric material.