HARMONIC DISTORTION VS. OUTPUT LOADING MACRO-MODELING

摘要

A method of harmonic distortion (HD) versus load modeling. A macro-model circuit is provided including a sub-circuit block(s) modeling an electronic device and an HD generation block in a signal path of the macro-model circuit that includes an HD equation relating a load current parameter responsive to an input voltage (Vin(t)). Responsive to receiving Vin(t) at an input of the macro-model circuit under a set of operating conditions including the output of the macro-model circuit loaded with an output impedance (Z), a simulated load current (iL) is generated. iL or another load current from iL (iL′) is fed back to the HD generation block to provide its load current parameter. The load current parameter is inputted into the HD equation for the HD equation to become a substituted equation. At least one simulated HD value under loading by Z for the electronic device is generated from the substituted equation.

主权项

1. A method of harmonic distortion (HD) versus output load circuit modeling, comprising:
providing a macro-model circuit including at least one sub-circuit block for modeling an electronic device and an HD generation block in a signal path of said macro-model circuit that includes an HD equation which relates a load current parameter responsive to an applied time-varying input voltage (Vin(t)), both said sub-circuit block and said HD generation block being stored in a non-transitory memory which are implemented by a processor; responsive to receiving said Vin(t) at an input of said macro-model circuit under a set of operating conditions including an output of said macro-model circuit loaded with an equivalent output impedance (Z), generating a simulated load current (iL); feeding back said iL or another load current measure derived from said iL (iL′) to said HD generation block to provide said load current parameter for said HD generation block; inputting said load current parameter into said HD equation so that said HD equation becomes a substituted equation, and generating at least one simulated HD value (first HD value) under loading by said Z for said electronic device from said substituted equation.