SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device in which junction formed between a source electrode layer and a drain electrode layer with an oxide semiconductor layer is ohmic junction.SOLUTION: A semiconductor device manufacturing method comprises: a process of performing heat treatment on an oxide semiconductor film. After the process of heat treatment, a first region having oxygen concentration lower then that of the oxide semiconductor film is formed between the oxide semiconductor film and a source electrode layer, and a second region having oxygen concentration lower than that of the oxide semiconductor film is formed between the oxide semiconductor film and a drain electrode layer. Since each of the first region and the second region has the oxygen concentration lower than that of the oxide semiconductor film, resistance is low and ohmic junction can be formed.