发明名称 Solar cell emitter region fabrication using etch resistant film
摘要 <p>Methods of fabricating solar cell emitter regions using etch resistant films and the resulting solar cells are described. In an example, a method of fabricating an emitter region of a solar cell includes forming a plurality of regions of N-type doped silicon nano-particles on a first surface of a substrate of the solar cell. A P-type dopant-containing layer is formed on the plurality of regions of N-type doped silicon nano-particles and on the first surface of the substrate between the regions of N-type doped silicon nano-particles. A capping layer is formed on the P-type dopant-containing layer. An etch resistant layer is formed on the capping layer. A second surface of the substrate, opposite the first surface, is etched to texturize the second surface of the substrate. The etch resistant layer protects the capping layer and the P-type dopant-containing layer during the etching.</p>
申请公布号 AU2013363569(A1) 申请公布日期 2015.06.18
申请号 AU20130363569 申请日期 2013.11.27
申请人 SUNPOWER CORPORATION 发明人 LOSCUTOFF, PAUL;COUSINS, PETER J.
分类号 H01L31/04;H01L31/18 主分类号 H01L31/04
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