PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

摘要

In a plasma processing apparatus having a plasma processing chamber for applying plasma processing to a sample, a first radio frequency power supply for supplying first radio frequency power for generation of a plasma, a sample stage for mounting the sample thereon, a second radio frequency power supply for supplying second radio frequency power to the sample stage, and a pulse-generating unit for sending to the first radio frequency power supply a first pulse for time modulation of the first radio frequency power and for sending to the second radio frequency power supply a second pulse for time modulation of the second radio frequency power, the pulse-generating unit includes a phase control waveform generation unit for generating a phase modulation-use waveform for modulating the phase of ON period of the second pulse and modulates by the phase modulation-use waveform the phase of ON period of the second pulse.

主权项

1. A plasma processing apparatus comprising;
a plasma processing chamber for applying plasma processing to a sample; a first radio frequency power supply for supplying first radio frequency power for generation of a plasma in said plasma processing chamber; a sample stage for mounting the sample thereon; a second radio frequency power supply for supplying second radio frequency power to said sample stage; and a pulse-generating unit for sending to said first radio frequency power supply a first pulse for time modulation of the first radio frequency power and for sending to said second radio frequency power supply a second pulse for time modulation of the second radio frequency power, wherein said pulse-generating unit comprises a phase control waveform generation unit for generating a phase modulation-use waveform for modulating a phase of ON period of the second pulse and modulates by the phase modulation-use waveform the phase of ON period of said second pulse.