发明名称 |
MIRROR ARRANGEMENT FOR AN EUV PROJECTION EXPOSURE APPARATUS, METHOD FOR OPERATING THE SAME, AND EUV PROJECTION EXPOSURE APPARATUS |
摘要 |
A mirror arrangement for an EUV projection exposure apparatus for microlithography comprises a plurality of mirrors each having a layer which is reflective in the EUV spectral range and to which EUV radiation can be applied, and having a main body. In this case, at least one mirror of the plurality of mirrors has at least one layer comprising a material having a negative coefficient of thermal expansion. Moreover, a method for operating the mirror arrangement and a projection exposure apparatus are described. At least one heat source is arranged, in order to locally apply heat in a targeted manner to the at least one layer having a negative coefficient of thermal expansion of the at least one mirror. |
申请公布号 |
US2015168674(A1) |
申请公布日期 |
2015.06.18 |
申请号 |
US201414584164 |
申请日期 |
2014.12.29 |
申请人 |
Carl Zeiss SMT GmbH |
发明人 |
Bittner Boris;Wabra Norbert;Schneider Sonja;Schneider Ricarda;Wagner Hendrik;Iliew Rumen;Pauls Walter |
分类号 |
G02B7/18;G02B27/00;G03F7/20;G02B17/06 |
主分类号 |
G02B7/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Oberkochen DE |