COMPLEMENTARY SONOS INTEGRATION INTO CMOS FLOW

摘要

Methods of integrating complementary SONOS devices into a CMOS process flow are described. In one embodiment, the method begins with depositing a hardmask (HM) over a substrate including a first-SONOS region and a second-SONOS region. A first tunnel mask (TUNM) is formed over the HM exposing a first portion of the HM in the second-SONOS region. The first portion of the HM is etched, a channel for a first SONOS device implanted through a first pad oxide overlying the second-SONOS region and the first TUNM removed. A second TUNM is formed exposing a second portion of the HM in the first-SONOS region. The second portion of the HM is etched, a channel for a second SONOS device implanted through a second pad oxide overlying the first-SONOS region and the second TUNM removed. The first and second pad oxides are concurrently etched, and the HM removed.

主权项

1. A method of manufacturing of a complementary silicon-oxide-nitride-oxide-silicon (SONOS) device, comprising:
depositing a hardmask (HM) over a surface of a substrate including a first-SONOS region and a second-SONOS region in which a pair of complementary P-SONOS and N-SONOS are to be formed concurrently; forming a first tunnel mask (TUNM) over the HM exposing a first portion of the HM in the second-SONOS region; etching the first portion of the HM, implanting a first channel for a first SONOS device through a first pad oxide overlying the second-SONOS region and removing the first TUNM; forming a second TUNM over the HM exposing a second portion of the HM in the first-SONOS region; etching the second portion of the HM, implanting a second channel for a second SONOS device through a second pad oxide overlying the first-SONOS region and removing the second TUNM, wherein the first and second channels include doping with opposite types of dopants; and concurrently etching the first and second pad oxides in the second-SONOS region and the first-SONOS region, and removing the HM in the first- and second-SONOS regions immediately afterwards.