MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

摘要

In a manufacturing method for a semiconductor device provided with a MONOS-type FET for a non-volatile memory and high-voltage and low-voltage MOSFETs, a groove having a predetermined depth is formed in a region in which the high-voltage MOSFET on a semiconductor substrate is formed, and an oxide film serving as a gate insulating film of the high-voltage MOSFET is formed within the formed groove by thermal oxidation. Thereafter, a gate electrode film of the low-voltage MOSFET is formed on the entire surface of the semiconductor substrate. Thereafter, a region for the MONOS-type FET is opened, the semiconductor surface of the semiconductor substrate is exposed, and a first potential barrier film, a charge storage film, and a second potential barrier film are sequentially deposited, to thereby form a charge storage three-layer film. Agate electrode film of the MONOS-type FET is formed on the formed charge storage three-layer film.

主权项

1. A manufacturing method for a semiconductor device including a non-volatile memory FET and a first breakdown voltage MOSFET, comprising:
(b) a step of forming a groove having a predetermined depth in a region on a semiconductor substrate having the first breakdown voltage MOSFET formed therein; (c) a step of forming a first oxide film within the groove through thermal oxidation after the step (b); (e) a step of forming a first gate electrode film on the first oxide film after the step (c); (i) a step of exposing a semiconductor surface of the semiconductor substrate in a region having the non-volatile memory FET formed therein after the step (e); (m) a step of forming a charge storage three-layer film by sequentially depositing a first potential barrier film, a charge storage film, and a second potential barrier film after the step (i); and (n) a step of forming a second gate electrode film on the charge storage three-layer film after the step (m).