| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
A semiconductor device incudes a cell region and a contact region, the cell region including a functional unit including a gate electrode, a source and a drain electrode, and the contact region including a gate pad. The gate electrode, the gate pad and the source electrode are disposed on a first main surface of a semiconductor substrate, and the drain electrode is disposed on a second main surface of the semiconductor substrate, the second main surface being opposite to the first main surface. A shielding member is disposed between the gate pad and the drain electrode, the shielding member being electrically connected to the source electrode. |
| 申请公布号 |
US2015171078(A1) |
申请公布日期 |
2015.06.18 |
| 申请号 |
US201514628721 |
申请日期 |
2015.02.23 |
| 申请人 |
Infineon Technologies Austria AG |
发明人 |
Kueck Daniel;Elpelt Rudolf |
| 分类号 |
H01L27/06;H01L29/417;H01L29/06;H01L29/423;H01L29/808;H01L29/861 |
主分类号 |
H01L27/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a cell region and a contact region, the cell region comprising a functional unit including a gate electrode, a source and a drain electrode, the contact region comprising a gate pad, the gate electrode, the gate pad and the source electrode being disposed on a first main surface of a semiconductor substrate, the drain electrode being disposed on a second main surface of the semiconductor substrate, the second main surface being opposite to the first main surface; and a shielding member disposed between the gate pad and the drain electrode, the shielding member being electrically connected to the source electrode. |
| 地址 |
Villach AT |
