| 发明名称 |
METHOD FOR FORMING SEMICONDUCTOR PACKAGE USING CARBON NANO MATERIAL IN MOLDING COMPOUND |
| 摘要 |
A method of forming a semiconductor package includes growing a layer of carbon nano material on a chip. The chip has a first surface and a second surface and the layer of carbon nano material is grown on the first surface of the chip. The layer of carbon nano material is configured to provide a path through which heat generated from the chip is dissipated. A substrate is attached to the second surface of the chip. A molding compound is formed above the substrate to encapsulate the chip and the layer of carbon nano material. |
| 申请公布号 |
US2015170990(A1) |
申请公布日期 |
2015.06.18 |
| 申请号 |
US201314132407 |
申请日期 |
2013.12.18 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
TSENG Chun-Hao;KUO Ying-Hao;YEE Kuo-Chung |
| 分类号 |
H01L23/34;H01L23/498;H01L21/56 |
主分类号 |
H01L23/34 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a semiconductor package, comprising:
growing a layer of carbon nano material on a chip, the chip having a first surface and a second surface, the layer of carbon nano material being grown on the first surface of the chip, wherein the layer of carbon nano material is configured to provide a path through which heat generated from the chip is dissipated; attaching a substrate to the second surface of the chip; and forming a molding compound above the substrate to encapsulate the chip and the layer of carbon nano material. |
| 地址 |
Hsinchu TW |
