| 发明名称 |
POSITIVE RESIST COMPOSITION, RESIN USED FOR THE POSITIVE RESIST COMPOSITION, COMPOUND USED FOR SYNTHESIS OF THE RESIN AND PATTERN FORMING METHOD USING THE POSITIVE RESIST COMPOSITION |
| 摘要 |
A positive resist composition comprises: (A) a resin of which solubility in an alkali developer increases under an action of an acid; (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (C) a resin having at least one of a fluorine atom and a silicon atom; and (D) a solvent; and a pattern forming method using the positive resist composition. |
| 申请公布号 |
US2015168838(A1) |
申请公布日期 |
2015.06.18 |
| 申请号 |
US201514633729 |
申请日期 |
2015.02.27 |
| 申请人 |
FUJIFILM Corporation |
发明人 |
KANDA Hiromi;KANNA Shinichi |
| 分类号 |
G03F7/075;G03F7/30;G03F7/039 |
主分类号 |
G03F7/075 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A positive resist composition, which comprises:
(A) a resin of which solubility in an alkali developer increases under an action of an acid; (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (C) a resin having at least one of a fluorine atom and a silicon atom; and (D) a solvent, wherein an amount added of the resin (C) is 0.1 to 10 mass %, based on the entire solid content of the positive resist composition, wherein the resin (C) is a linear polymer, and the resin (C) contains no polyoxyalkylene group. |
| 地址 |
Tokyo JP |
