| 摘要 |
PROBLEM TO BE SOLVED: To provide high quality single crystal silicon carbide with less defects.SOLUTION: In a silicon carbide crystal growth method using a solution technique, a melting pot based on SiC is used as a storage section of Si-C solution. When the melting pot is heated, temperature distribution is generated in a manner that increases a temperature with an increasing depth of the Si-C solution from an upper side to a lower side thereof in the melting pot. Also, Si and C originated from the melting pot based on the SiC is eluted from a high temperature region on the surface of the melting pot where the same contacts the Si-C solution and thereby preventing polycrystalline SiC from generating on the surface of the melting pot where the same contacts the Si-C solution. With the silicon carbide solution kept in this state, the same is brought into contact with SiC seed crystals at an upper section thereof so as to allow single SiC crystals to be generated on the SiC seed crystals. By using the melting pot based on the SiC, the method curbs: a composition variation in the Si-C solution; precipitation of the polycrystalline SiC on an inner wall of the melting pot; and generation of metallic carbide formed when added metallic elements M combine with carbon C. |
